Phase Change Memory Laboratory

Theme

Development of PCM technology essentially involves interdisciplinary approach in order to understand various key aspects including structure-property correlations, ultrafast dynamics of re-crystallization/re-amorphization, design of novel chalcogenide materials, ns/ps electrical switching dynamics, scaling & integration issues, ultafast programming characteristics and the fundamental origin of electrical switching.

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Therefore, goal of our group is "to explore local structure and physical properties of chalcogenide materials, design of novel materials, development of PCM technology for various applications including high speed non-volatile random access memory (NVRAM), Multi-bit data storage technology, vertically stackable cross-point memory for high-density high speed NVRAM, PCM for space applications, phase change logic devices, phase change synaptic device for neuromorphic computing".

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PCM is an emerging memory technology exploits unique feature of chalcogenide-based phase change materials that undergo ultrafast and reversible phase transitions between a highly resistive amorphous state (digital “0”) and a conducting crystalline state (digital “1”) using nanosecond (ns) electrical pulses. Such permanent, yet reversible phase transitions (more than 10 million cycles) are stable over 10 years, ensures non-volatility as well as faster programming (ns) and therefore, PCM is being demonstrated as a strong candidate not only for next generation high speed non-volatile memory but also  'universal memory' for future high speed computing devices.

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